Impact of LeTID in Industrial P- and Sb-Doped n-Type Cz-Si With Melt Recharging
DOI:
https://doi.org/10.52825/siliconpv.v3i.2671Keywords:
Degradation, Charge Carrier Lifetime, Silicon, Melt RechargingAbstract
In this study the impact of treatments under illumination at elevated temperatures on the long-term stability of excess carrier lifetime in state-of-the-art melt recharging Czochralski-grown silicon with n-type dopants is investigated. For samples that are treated at elevated temperatures and illumination only, it is found that bulk regeneration dominates until surface related degradation becomes limiting. If an additional light-soaking treatment at room temperature is previously applied, both bulk degradation and regeneration can be observed for P- and Sb-doped Cz-Si. An increase in degradation extent is observed for subsequently pulled ingots which is very similar for both dopant species. It is therefore assumed that the accumulation of impurities in n-type Cz-Si may be involved in an increase of defects that form during treatment at elevated temperatures and illumination. Furthermore, it is shown for Sb-doped material that the applied high temperature processing steps do not have an impact on degradation extent or kinetics.
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[1] M. Fischer, “International technology roadmap for photovoltaic (ITRPV),” 2025, url: www.itrpv.org
[2] B. Fickett et al., “Multiple batch recharging for industrial CZ silicon growth,” J. Cryst. Growth, vol.225, no.2–4, pp. 580–585, May, 2001, doi: https://doi.org/10.1016/S0022-0248(01)00956-3
[3] F. Mosel et al., “Cost effective growth of silicon mono ingots by the application of a mo-bile recharge system Cz-puller,” Proc. 32nd EUPVSEC, 2016, pp. 1064–1068, doi: http://dx.doi.org/10.4229/EUPVSEC20162016-2DV.3.32
[4] LONGi. “LONGi TERA: New Era of Wafers.” LONGi. [Online]. Available: https://www.longi.com/eu/news/tera-wafers/. (Accessed: Apr. 2, 2025).
[5] T. Niewelt et al., “Light-induced degradation and regeneration in n-type silicon,” Energy Procedia, vol.77, pp. 626–632, Aug, 2015, doi: https://doi.org/10.1016/j.egypro.2015.07.090
[6] M. Mehler et al., “Long-term carrier lifetime instabilities in n-type FZ- and Cz-silicon under illumination at elevated temperature,” Sol. Energy Mater. Sol. Cells, vol.278, pp.113169, Dec, 2024, doi: https://doi.org/10.1016/j.solmat.2024.113169
[7] F. Maischner et al., “Atomic-layer-deposited Al2O3 as effective barrier against the diffu-sion of hydrogen from SiNx:H layers into crystalline silicon during rapid thermal anneal-ing,” Prog. Photovolt.: Res. Appl. vol.14, no.12, Sep, 2021, doi: https://doi.org/10.1002/pssr.202000367
[8] U. Varshney et al., “Impact of substrate thickness on the degradation in multicrystalline silicon,” IEEE J. Photovolt., vol.11, no.1, pp. 65–72, Nov, 2020, doi: https://doi.org/10.1109/JPHOTOV.2020.3038412
[9] D. Chen et al., “Hydrogen induced degradation: A possible mechanism for light- and ele-vated temperature-induced degradation in n-type silicon,” Sol. Energy Mater. Sol. Cells vol.185, pp. 174–182, Oct, 2018, doi: https://doi.org/10.1016/j.solmat.2018.05.034
[10] J. Kamphues et al., “The impact of gettering on LeTID in industrial Czochralski grown gallium-doped p-type silicon ingots with melt recharging,” Sol. Energy Mater. Sol. Cells, vol.282, no.113423, Apr., 2025, doi: https://doi.org/10.1016/j.solmat.2025.113423
[11] D. C. Walter et al., “Understanding lifetime degradation in Czochralski-grown n-type sili-con after high-temperature processing,” Proc. 28th EUPVSEC, Paris, 2013
[12] A. Herguth, “On the meaning(fullness) of the intensity unit ‘suns’ in light induced degrada-tion experiments,” Energy Procedia, vol.124, pp. 53-59, Sep, 2017, doi: https://doi.org/10.1016/j.egypro.2017.09.339
[13] D. Sperber et al., “A 3-state defect model for light induced degradation in boron-doped float-zone silicon,” Phys. Status Solidi RRL, vol.11, no.3, pp. 1600408 Jan, 2017, doi: https://doi.org/10.1002/pssr.201600408
[14] J. Kamphues et al., “Addressing lifetime instabilities during illumination treatments in n-type c-silicon by three state models,“ submitted to journal, 2025
[15] A. Graf et al., “Determination of BO-LID and LeTID related activation energies in Cz-Si and FZ-Si using constant injection conditions,” AIP Conf. Proc., vol.2147, no.1 pp. 140003, Aug, 2019, doi: https://doi.org/10.1063/1.5123890
[16] R. A. Sinton, “Contactless determination of current–voltage characteristics and minority‐carrier lifetimes in semiconductors from quasi‐steady‐state photoconductance data,” Appl. Phys. Lett., vol.69, no.17, pp. 2510–2512, Oct, 1996, doi: https://doi.org/10.1063/1.117723
[17] H. Nagel et al., “Generalized analysis of quasi-steady-state and quasi-transient meas-urements of carrier lifetimes in semiconductors,” J. Appl. Phys., vol.86, no.11, pp. 6218–6221, Dec, 1999, doi: https://doi.org/10.1063/1.371633
[18] A. Herguth, “On the lifetime-equivalent defect density: Properties, applications and pit-falls,” IEEE J. Photovolt. Vol.9 no.5, pp. 1182–1194, Jun, 2019, doi: https://doi.org/10.1109/JPHOTOV.2019.2922470
[19] A. Kimmerle et al., “Carrier-diffusion corrected J0-analysis of charge carrier lifetime measurements for increased consistency,” Sol. Energy Mater. Sol. Cells, vol.142, pp. 116–122, Nov, 2015, doi: https://doi.org/10.1016/j.solmat.2015.06.043
[20] T. Niewelt, “Reassessment of the intrinsic bulk recombination in crystalline silicon,” Sol. Energy Mater. Sol. Cells, vol.235, pp. 111467, doi: https://doi.org/10.1016/j.solmat.2021.111467
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Copyright (c) 2025 Joshua Kamphues, Sarah Marie Warmbold, Juri Miech, Wei Han, Yichun Wang, Axel Herguth, Giso Hahn, Fabian Geml
This work is licensed under a Creative Commons Attribution 4.0 International License.
Accepted 2025-07-18
Published 2026-01-13
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Bundesministerium für Wirtschaft und Klimaschutz
Grant numbers 03EE1148D