Evaluation of Different Front Surface Passivation Schemes for p-type IBC Solar Cells

Marius Meßmer; Lazhar Rachdi; Pierre Saint-Cast; Stefan Schmidt; Nico Jung; Jan Lossen; Andreas Wolf

doi:10.52825/siliconpv.v3i.2692

Authors

Marius Meßmer Fraunhofer Institute for Solar Energy Systems https://orcid.org/0000-0002-5150-2655
Lazhar Rachdi International Solar Energy Research Center Konstanz
Pierre Saint-Cast Fraunhofer Institute for Solar Energy Systems
Stefan Schmidt Fraunhofer Institute for Solar Energy Systems
Nico Jung Fraunhofer Institute for Solar Energy Systems
Jan Lossen International Solar Energy Research Center Konstanz https://orcid.org/0000-0003-4981-8674
Andreas Wolf Fraunhofer Institute for Solar Energy Systems

DOI:

https://doi.org/10.52825/siliconpv.v3i.2692

Keywords:

PIBC, PE-ALD, ALD, FSF, Passivation

Abstract

In this work, we investigate different front-side passivation approaches for p-type IBC solar cells. We compare a POCl₃-diffused and SiN_x-passivated front floating emitter (FFE) with an undiffused front surface passivated by a layer stack of aluminum oxide Al₂O₃ and silicon nitride SiN_x, using different technologies for Al₂O₃ deposition. Further, we investigate a boron-doped front surface field (FSF), realized with different BBr₃ diffusion approaches. We achieve promising implied open-circuit voltages iV_oc of up to 740 mV with Al₂O₃/SiN_x-passivation, which is a 7 mV increase compared to the reference process using the phosphorus-doped FFE. Further, we fabricated boron-doped FSF samples exhibiting promising recombination parameters of j₀ < 6 fA/cm². The transfer of the Al₂O₃/SiN_x-passivation into pIBC solar cells already reaches peak efficiencies of h = 23.3%, comparable to the FFE.

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Evaluation of Different Front Surface Passivation Schemes for p-type IBC Solar Cells

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