Approaches to Reduce the Impact of Edge Recombination in Si Lifetime Samples With Emitter
DOI:
https://doi.org/10.52825/siliconpv.v3i.2700Keywords:
Edge Recombination, Injection-Dependent Effective Lifetime, Edge PassivationAbstract
The injection-dependent effective excess carrier lifetime is an important quantity to describe recombination characteristics in silicon. When measured with the photo-conductance decay technique it is known that for specific sample structures and sizes edge recombination can strongly affect the measured injection-dependent lifetime. Especially in lifetime samples involving an (induced) pn-junction edge recombination can become a dominant effect limiting lifetime towards low injection. We present different approaches to structure samples in order to suppress the detrimental effect of edge recombination on lifetime at low injection.
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Copyright (c) 2025 David Bäurle, Axel Herguth, Giso Hahn
This work is licensed under a Creative Commons Attribution 4.0 International License.
Accepted 2025-07-14
Published 2025-12-17
Funding data
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Bundesministerium für Wirtschaft und Klimaschutz
Grant numbers FKZ 020E-100600896