Development of a p-type Silicon Interdigitated Back Contact Solar Cell With Passivated Contacts

Authors

DOI:

https://doi.org/10.52825/siliconpv.v3i.2708

Keywords:

IBC, P-Type, TOPCon, Passivated Contact

Abstract

P-type interdigitated back contact (pIBC) solar cells represent a promising alternative to the currently dominant Tunnel Oxide Passivated Contact (TOPCon) technology, utilizing the industrially established metallization scheme of Passivated Emitter and Rear Cells (PERC) for the p-type base while incorporating TOPCon metallization for the n-type polycrystalline emitter. In this study, we present the results of optimization efforts aimed at increasing the efficiency pIBC cells manufactured in our lab by minimizing metallization-induced losses. Aluminum pastes with varying silicon content were used, and the firing temperature was adjusted. These modifications resulted in a reduction in the metallization-induced Voc​ loss after aluminum metallization to 5 mV, along with contact resistance values below 1 mΩ.cm². Additionally, reducing the n-polySi thickness led to a decrease in free carrier absorption and an increase in Jsc​. Finally, we achieved non-metallized cell precursors exhibiting iVoc​ values between 730 and 740 mV and a champion solar cell efficiency of 23.3%.

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References

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Published

2026-01-27

How to Cite

Rachdi, L., Meßmer, M., Comak, M., Lossen, J., Wolf, A., & Koduvelikulathu, L. J. (2026). Development of a p-type Silicon Interdigitated Back Contact Solar Cell With Passivated Contacts. SiliconPV Conference Proceedings, 3. https://doi.org/10.52825/siliconpv.v3i.2708

Conference Proceedings Volume

Vol. 3 (2025): SiliconPV 2025, 15th International Conference on Crystalline Silicon Photovoltaics

Section

Advances in Industrial Silicon Solar Cells

License

Copyright (c) 2025 Lazhar Rachdi, Marius Meßmer, Mertcan Comak, Jan Lossen, Andreas Wolf, Lejo Joseph Koduvelikulathu

Creative Commons License

This work is licensed under a Creative Commons Attribution 4.0 International License.

Received 2025-04-17
Accepted 2025-10-30
Published 2026-01-27

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