TOPCon, TOPCoRE or TOPCon²
A Simulation-Based Efficiency Analysis
DOI:
https://doi.org/10.52825/siliconpv.v3i.2715Keywords:
TOPCon, Photovoltaic, Efficiency, Simulation, Wafer QualityAbstract
As tunnel oxide passivated contact (TOPCon) cell technology has established itself as the dominant cell technology in global photovoltaic production, this study investigates competing architectures, including TOPCoRE (TOPCon with Rear Emitter), and local TOPCon² (passivated contacts on both sample sides), to identify paths for enhancing power output by improving the cells’ front side. The authors conduct a comprehensive simulation analysis using Quokka3, with input parameters derived from internal measurements and published data. While pointing out the necessary surface parameters to achieve a certain cell efficiency evolution, the sensitivity of the cell concepts to wafer quality, base resistance, and minority carrier lifetime is evaluated. The results indicate that the TOPCoRE concept on p-type wafers can be a strong contender to the standard iTOPCon, reaching 26%+ efficiency, if equally high electrical wafer quality can be achieved. The findings highlight the importance of further optimization paths, with local Front Surface Fields or local front TOPCon layers, demonstrating potential efficiencies of up to 26.5% and more.
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[1] F. Feldmann et al., “Passivated rear contacts for high-efficiency n-type Si solar cells providing high interface passivation quality and excellent transport characteristics,” Sol. Energy Mater. Sol. Cells, vol. 120, pp. 270–274, 2014, doi: https://doi.org/10.1016/j.solmat.2013.09.017 DOI: https://doi.org/10.1016/j.solmat.2013.09.017
[2] A. Richter et al., “Tunnel oxide passivating electron contacts as full-area rear emitter of high-efficiency p-type silicon solar cells,” Prog Photovolt Res Appl., vol. 26, no. 8, p. 233506, 2018, doi: https://doi.org/10.1002/pip.2960 DOI: https://doi.org/10.1002/pip.2960
[3] A. Fell, “A free and fast three-dimensional/two-dimensional solar cell simulator featuring conductive boundary and quasi-neutrality approximations,” IEEE Trans. Electron Devic-es, vol. 60, no. 2, pp. 733–738, 2013, doi: https://doi.org/10.1109/TED.2012.2231415 DOI: https://doi.org/10.1109/TED.2012.2231415
[4] ITRPV, “International Technology Roadmap for Photovoltaic (ITRPV): 2023 Results,” VDMA, 2023.
[5] A. Mette et al., “Q.ANTUM NEO with LECO Exceeding 25.5 % cell Efficiency,” Sol. En-ergy Mater. Sol. Cells, vol. 277, p. 113110, 2024, https://doi.org/10.1016/j.solmat.2024.113110 DOI: https://doi.org/10.1016/j.solmat.2024.113110
[6] J. Horzel et al., "High lifetime Ga‐doped Cz‐Si for carrier‐selective junction solar cells," Solar RRL, vol. 7, no.8, p. 2200613, 2023, https://doi.org/10.1002/solr.202200613 DOI: https://doi.org/10.1002/solr.202200613
[7] D. C. Walter et al., “Realistic efficiency potential of next-generation industrial Czochral-ski-grown silicon solar cells after deactivation of the boron-oxygen-related defect center,” Prog Photovolt Res Appl., vol. 24, no. 7, pp. 920–928, 2016, https://doi.org/10.1002/pip.2731 DOI: https://doi.org/10.1002/pip.2731
[8] Di Yan et al., “Polysilicon passivated junctions: The next technology for silicon solar cells?,” Joule, vol. 5, no. 4, pp. 811–828, 2021, https://doi.org/10.1016/j.joule.2021.02.013 DOI: https://doi.org/10.1016/j.joule.2021.02.013
[9] T. Sugiura et al., “Advanced Industrial Tunnel Oxide Passivated Contact Solar Cell by the Rear-Side Local Carrier-Selective Contact,” Electron Devices, IEEE Transactions on, vol. 69, no. 5, pp. 2481–2487, 2022, https://doi.org/10.1109/TED.2022.3159272 DOI: https://doi.org/10.1109/TED.2022.3159272
[10] W. Wan et al., “Enhancing passivation and reducing absorption losses in TOPCon solar cells via Poly-Si finger structure,” Sol. Energy Mater. Sol. Cells, vol. 286, p. 113600, 2025, https://doi.org/10.1016/j.solmat.2025.113600 DOI: https://doi.org/10.1016/j.solmat.2025.113600
[11] R. Brendel et al.,“Theory of analyzing free energy losses in solar cells,” Appl. Phys. Lett., vol. 93, no. 17, p. 173503, 2008, https://doi.org/10.1063/1.3006053 DOI: https://doi.org/10.1063/1.3006053
[12] T. Niewelt et al.,“Reassessment of the intrinsic bulk recombination in crystalline silicon,” Sol. Energy Mater. Sol. Cells, vol. 235, p. 111467, 2022, https://doi.org/10.1016/j.solmat.2021.111467 DOI: https://doi.org/10.1016/j.solmat.2021.111467
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Copyright (c) 2025 Nico Wöhrle, Johannes Greulich, Armin Richter, Andreas Wolf, Jochen Rentsch, Stefan Rein
This work is licensed under a Creative Commons Attribution 4.0 International License.
Accepted 2025-09-30
Published 2025-12-17